elektronische bauelemente S2N7002DW 115ma, 60v dual n-channel mosfet 19-may-2011 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free mechanical data ? case: sot-363 molded plastic. ? case material-ul flammability rating 94v-0 ? terminals: solderable per mil-std-202, method 208 ? weight: 0.006 grams(approx.) device marking: package information package mpq leader size sot-363 3k 7? inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v ds 60 v drain ? gate voltage r gs 1m ? v dgr 60 v gate ? source voltage v gs 20 v continuous drain current i d 115 ma power dissipation p d 380 mw maximum junction-to-ambient r ja 328 c / w operating junction & stor age temperature range t j , t stg -55~150 c note: 1. pulse width limited by maximum junction temperature. sot-363 millimete r millimete r ref. min. max. ref. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 702
elektronische bauelemente S2N7002DW 115ma, 60v dual n-channel mosfet 19-may-2011 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 60 - - v v gs =0, i d =10 a gate-threshold voltage v gs(th) 1 - 2 v v ds =v gs, i d =250 a gate-source leakage i gss - - 1 a v ds =0 , v gs = 20v t c = 25c - - 1 v ds =60v, v gs =0 zero gate voltage drain current t c = 125c i dss - - 500 a v ds =60v, v gs =0 on-state drain current i d(on) 0.5 - - a v gs =10v, v ds =7.5v t j = 25c - - 7.5 v gs =5v, i d =0.05a drain-source on resistance t j = 125c r ds(on) - - 13.5 ? v gs =10v, i d =0.5a forward transconductance g fs 80 - - ms v ds R 2 v ds(on) , i d = 0.2a body-drain diode ratings diode forward on?voltage v sd - - -1.5 v i s =115ma, v gs =0 source current continuous(body diode) i s - - -115 ma source current pulsed i sm - - -800 ma dynamic characteristics input capacitance c iss - - 50 output capacitance c oss - - 25 reverse transfer capacitance c rss - - 5 pf v ds =25v, v gs =0, f=1mhz switching characteristics turn-on delay time t d(on) - - 20 turn-off delay time t d(off) - - 40 ns v dd =25v, i d =0.5a r l =50 ? , v gen =10v, r g =25 ?
elektronische bauelemente S2N7002DW 115ma, 60v dual n-channel mosfet 19-may-2011 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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